文献
J-GLOBAL ID:201502207678390910
整理番号:15A1004852
極性AlGaNの電荷中立性レベル,障壁高さ,および,バンドオフセット
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
著者 (9件):
REDDY Pramod
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
BRYAN Isaac
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
BRYAN Zachary
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
TWEEDIE James
(Adroit Materials, Apex, North Carolina 27539, USA)
,
WASHIYAMA Shun
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
KIRSTE Ronny
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
MITA Seiji
(HexaTech, Inc., 991 Aviation Pkwy., Suite 800, Morrisville, North Carolina 27560, USA)
,
COLLAZO Ramon
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
,
SITAR Zlatko
(Dep. of Materials Sci. and Engineering, North Carolina State Univ., Raleigh, North Carolina 27695-7919, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
107
号:
9
ページ:
091603-091603-5
発行年:
2015年08月31日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)