文献
J-GLOBAL ID:201502207769208820
整理番号:15A0628094
シリコン基板上へ成長させたGaN系MIS-HEMTにおける捕獲機構
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
著者 (9件):
BISI Davide
(Dep. of Information Engineering, Univ. of Padova, via Gradenigo 6B, 35131, Padova, ITA)
,
MENEGHINI Matteo
(Dep. of Information Engineering, Univ. of Padova, via Gradenigo 6B, 35131, Padova, ITA)
,
VAN HOVE Marleen
(IMEC, Kapeldreef 75, 3001, Heverlee, BEL)
,
MARCON Denis
(IMEC, Kapeldreef 75, 3001, Heverlee, BEL)
,
STOFFELS Steve
(IMEC, Kapeldreef 75, 3001, Heverlee, BEL)
,
WU Tian-Li
(IMEC, Kapeldreef 75, 3001, Heverlee, BEL)
,
DECOUTERE Stefaan
(IMEC, Kapeldreef 75, 3001, Heverlee, BEL)
,
MENEGHESSO Gaudenzio
(Dep. of Information Engineering, Univ. of Padova, via Gradenigo 6B, 35131, Padova, ITA)
,
ZANONI Enrico
(Dep. of Information Engineering, Univ. of Padova, via Gradenigo 6B, 35131, Padova, ITA)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
212
号:
5
ページ:
1122-1129
発行年:
2015年05月
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)