文献
J-GLOBAL ID:201502208257491030
整理番号:15A1314602
密度汎関数理論計算を用いたSiCの白金支援フッ酸エッチングの機構の研究
Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations
著者 (7件):
BUI P. V.
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Osaka 565-0871, JPN)
,
ISOHASHI A.
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Osaka 565-0871, JPN)
,
KIZAKI H.
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Osaka 565-0871, JPN)
,
SANO Y.
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Osaka 565-0871, JPN)
,
YAMAUCHI K.
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Osaka 565-0871, JPN)
,
MORIKAWA Y.
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Osaka 565-0871, JPN)
,
INAGAKI K.
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., Osaka 565-0871, JPN)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
107
号:
20
ページ:
201601-201601-4
発行年:
2015年11月16日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)