文献
J-GLOBAL ID:201502208794377820
整理番号:15A1172173
シリコン太陽電池のための塩化セシウム自己集合リソグラフィーによる逆ピラミッド構造の作製
Fabrication of inverted pyramid structure by Cesium Chloride self-assembly lithography for silicon solar cell
著者 (10件):
LIU Jing
(Inst. of High Energy Physics, Chinese Acad. of Sciences, Beijing 100049, CHN)
,
LIU Jing
(Univ. of Chinese Acad. of Sciences, Beijing 100049, CHN)
,
ZHANG Xinshuai
(Inst. of High Energy Physics, Chinese Acad. of Sciences, Beijing 100049, CHN)
,
ZHANG Xinshuai
(Univ. of Chinese Acad. of Sciences, Beijing 100049, CHN)
,
SUN Gangjie
(Inst. of High Energy Physics, Chinese Acad. of Sciences, Beijing 100049, CHN)
,
SUN Gangjie
(Univ. of Chinese Acad. of Sciences, Beijing 100049, CHN)
,
WANG Bo
(Inst. of High Energy Physics, Chinese Acad. of Sciences, Beijing 100049, CHN)
,
ZHANG Tianchong
(Inst. of High Energy Physics, Chinese Acad. of Sciences, Beijing 100049, CHN)
,
YI Futing
(Inst. of High Energy Physics, Chinese Acad. of Sciences, Beijing 100049, CHN)
,
LIU Peng
(Inst. of High Energy Physics, Chinese Acad. of Sciences, Beijing 100049, CHN)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
40
ページ:
44-49
発行年:
2015年12月
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)