文献
J-GLOBAL ID:201502208816606659
整理番号:15A0908525
酸化物系抵抗ランダムアクセスメモリの物理的及び化学的機構
Physical and chemical mechanisms in oxide-based resistance random access memory
著者 (15件):
CHANG Kuan-Chang
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
CHANG Ting-Chang
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
TSAI Tsung-Ming
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
ZHANG Rui
(China National Petroleum Corp., Beijing, CHN)
,
HUNG Ya-Chi
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
SYU Yong-En
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
CHANG Yao-Feng
(Univ. Texas at Austin, TX, USA)
,
CHEN Min-Chen
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
CHU Tian-Jian
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
CHEN Hsin-Lu
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
PAN Chih-Hung
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
SHIH Chih-Cheng
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
ZHENG Jin-Cheng
(Xiamen Univ., Xiamen, CHN)
,
SZE Simon M
(National Sun Yat-Sen Univ., Kaohsiung, TWN)
,
SZE Simon M
(Stanford Univ., CA, USA)
資料名:
Nanoscale Research Letters (Web)
(Nanoscale Research Letters (Web))
巻:
10
号:
1
ページ:
10:120 (WEB ONLY)
発行年:
2015年12月
JST資料番号:
U7001A
ISSN:
1931-7573
資料種別:
逐次刊行物 (A)
記事区分:
解説
発行国:
イギリス (GBR)
言語:
英語 (EN)