文献
J-GLOBAL ID:201502209292418341
整理番号:15A0792704
CMOS両立プロセスを用いた共通の高κゲート誘電体を有する自己整合反転チャンネルn-InGaAS,p-GaSbおよびp-Ge MOSFET
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
著者 (14件):
FU C.H.
(Graduate Inst. of Applied Physics and Dep. of Physics, National Taiwan Univ., Taipei, Taiwan)
,
LIN Y.H.
(Graduate Inst. of Applied Physics and Dep. of Physics, National Taiwan Univ., Taipei, Taiwan)
,
LEE W.C.
(Dep. of Physics, National Tsing Hua Univ., Hsinchu, Taiwan)
,
LIN T.D.
(Graduate Inst. of Applied Physics and Dep. of Physics, National Taiwan Univ., Taipei, Taiwan)
,
CHU R.L.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu, Taiwan)
,
CHU L.K.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu, Taiwan)
,
CHANG P.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu, Taiwan)
,
CHEN M.H.
(Graduate Inst. of Electronic Engineering, National Taiwan Univ., Taipei, Taiwan)
,
HSUEH W.J.
(Dep. of Electrical Engineering, National Central Univ., Jhongli, Taiwan)
,
CHEN S.H.
(National Nano Device Laboratories (NDL), Hsinchu, Taiwan)
,
BROWN G.J.
(Air Force Res. Lab. (AFRL), Dayton, OH, USA)
,
CHYI J.I.
(Dep. of Electrical Engineering, National Central Univ., Jhongli, Taiwan)
,
KWO J.
(Dep. of Physics, National Tsing Hua Univ., Hsinchu, Taiwan)
,
HONG M.
(Graduate Inst. of Applied Physics and Dep. of Physics, National Taiwan Univ., Taipei, Taiwan)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
147
ページ:
330-334
発行年:
2015年11月01日
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)