文献
J-GLOBAL ID:201502210942875333
整理番号:15A0774867
LiGaO2(100)基板に成長した非極性m面GaN発光ダイオードウェハの特性の研究
Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates
著者 (8件):
YANG Weijia
(South China Univ. of Technol., State Key Lab. of Luminescent Materials and Devices, 510640, Guangzhou, CHN)
,
WANG Wenliang
(South China Univ. of Technol., State Key Lab. of Luminescent Materials and Devices, 510640, Guangzhou, CHN)
,
LIN Yunhao
(South China Univ. of Technol., State Key Lab. of Luminescent Materials and Devices, 510640, Guangzhou, CHN)
,
LIU Zuolian
(South China Univ. of Technol., State Key Lab. of Luminescent Materials and Devices, 510640, Guangzhou, CHN)
,
ZHOU Shizhong
(South China Univ. of Technol., State Key Lab. of Luminescent Materials and Devices, 510640, Guangzhou, CHN)
,
QIAN Huirong
(South China Univ. of Technol., State Key Lab. of Luminescent Materials and Devices, 510640, Guangzhou, CHN)
,
LI Guoqiang
(South China Univ. of Technol., State Key Lab. of Luminescent Materials and Devices, 510640, Guangzhou, CHN)
,
LI Guoqiang
(South China Univ. of Technol., Dep. of Electronic Materials, School of Materials Sci. and Engineering, 510640 ...)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
44
号:
8
ページ:
2670-2678
発行年:
2015年08月
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)