文献
J-GLOBAL ID:201502211609448971
整理番号:15A0936562
高エネルギー電子ビームリソグラフィーにおける絶縁基板上の帯電効果を抑制する方法【Powered by NICT】
A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography
著者 (5件):
Yu Mingyan
(Harbin Univ. of Sci. and Technol. The Higher Educational Key Lab. for Measuring & Control Technol. and ...)
,
Zhao Shirui
(Inst. of Microelectronics, Chinese Acad. of Sciences Key Lab. of Microelectronics Devices & Integrated Technol. ...)
,
Jing Yupeng
(Inst. of Microelectronics, Chinese Acad. of Sciences Key Lab. of Microelectronics Devices & Integrated Technol. ...)
,
Shi Yunbo
(Harbin Univ. of Sci. and Technol. The Higher Educational Key Lab. for Measuring & Control Technol. and ...)
,
Chen Baoqin
(Inst. of Microelectronics, Chinese Acad. of Sciences Key Lab. of Microelectronics Devices & Integrated Technol. ...)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
35
号:
12
ページ:
126002-1-126002-6
発行年:
2014年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)