文献
J-GLOBAL ID:201502211781862193
整理番号:15A0581215
非照射6H-SiCナノ構造のシリコン空孔関連中心
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
著者 (12件):
BAGRAEV N. T.
(Russian Acad. of Sciences, Ioffe Physicaltechnical Inst., 194021, St. Petersburg, RUS)
,
BAGRAEV N. T.
(State Polytechnical Univ., 195251, St. Petersburg, RUS)
,
DANILOVSKII E. Yu.
(Russian Acad. of Sciences, Ioffe Physicaltechnical Inst., 194021, St. Petersburg, RUS)
,
GETS D. S.
(Russian Acad. of Sciences, Ioffe Physicaltechnical Inst., 194021, St. Petersburg, RUS)
,
KALABUKHOVA E. N.
(National Acad. of Sciences of Ukraine, Lashkaryov Inst. of Semiconductor Physics, 03028, Kyiv, UKR)
,
KLYACHKIN L. E.
(Russian Acad. of Sciences, Ioffe Physicaltechnical Inst., 194021, St. Petersburg, RUS)
,
KOUDRYAVTSEV A. A.
(Russian Acad. of Sciences, Ioffe Physicaltechnical Inst., 194021, St. Petersburg, RUS)
,
MALYARENKO A. M.
(Russian Acad. of Sciences, Ioffe Physicaltechnical Inst., 194021, St. Petersburg, RUS)
,
MASHKOV V. A.
(State Polytechnical Univ., 195251, St. Petersburg, RUS)
,
SAVCHENKO D. V.
(National Acad. of Sciences of Ukraine, Lashkaryov Inst. of Semiconductor Physics, 03028, Kyiv, UKR)
,
SAVCHENKO D. V.
(Acad. of Sciences of Czech Republic, Inst. of Physics, Praha, CZE)
,
SHANINA B. D.
(National Acad. of Sciences of Ukraine, Lashkaryov Inst. of Semiconductor Physics, 03028, Kyiv, UKR)
資料名:
Semiconductors
(Semiconductors)
巻:
49
号:
5
ページ:
649-657
発行年:
2015年05月
JST資料番号:
T0093A
ISSN:
1063-7826
CODEN:
SMICES
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)