文献
J-GLOBAL ID:201502211883933141
整理番号:15A0706417
引張歪下のMoS2単分子層の相転移,有効質量及びキャリア移動度
Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain
著者 (7件):
YU Sheng
(Dep. of Electrical and Computer Engineering, George Mason Univ., Fairfax, VA 22030, USA)
,
XIONG Hao D.
(Dep. of Electrical and Electronic Engineering, South Univ. of Sci. and Technol. of China, Shenzhen, CHN)
,
XIONG Hao D.
(Semiconductor and Dimensional Metrology Div., National Inst. of Standards and Technol., Gaithersburg, MD 20899, USA)
,
ESHUN Kwesi
(Dep. of Electrical and Computer Engineering, George Mason Univ., Fairfax, VA 22030, USA)
,
YUAN Hui
(Dep. of Electrical and Computer Engineering, George Mason Univ., Fairfax, VA 22030, USA)
,
YUAN Hui
(Semiconductor and Dimensional Metrology Div., National Inst. of Standards and Technol., Gaithersburg, MD 20899, USA)
,
LI Qiliang
(Dep. of Electrical and Computer Engineering, George Mason Univ., Fairfax, VA 22030, USA)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
325
ページ:
27-32
発行年:
2015年01月15日
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)