文献
J-GLOBAL ID:201502212737561387
整理番号:15A0447002
28nm高k金属ゲート技術における欠陥不動態化のためのゲートスタック内のフッ素界面処理
Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology
著者 (9件):
DRESCHER Maximilian
(Fraunhofer IPMS-CNT, Koenigsbrueckerstrasse 178, 01099 Dresden, DEU)
,
NAUMANN Andreas
(Fraunhofer IPMS-CNT, Koenigsbrueckerstrasse 178, 01099 Dresden, DEU)
,
SUNDQVIST Jonas
(Fraunhofer IPMS-CNT, Koenigsbrueckerstrasse 178, 01099 Dresden, DEU)
,
ERBEN Elke
(Globalfoundries, Wilschdorfer Landstrasse 101, 01109 Dresden, DEU)
,
GRASS Carsten
(Globalfoundries, Wilschdorfer Landstrasse 101, 01109 Dresden, DEU)
,
TRENTZSCH Martin
(Globalfoundries, Wilschdorfer Landstrasse 101, 01109 Dresden, DEU)
,
LAZAREVIC Florian
(MATcalc, GWT-TUD, Annabergerstrasse 240, 09125 Chemnitz, DEU)
,
LEITSMANN Roman
(MATcalc, GWT-TUD, Annabergerstrasse 240, 09125 Chemnitz, DEU)
,
PLAENITZ Philipp
(MATcalc, GWT-TUD, Annabergerstrasse 240, 09125 Chemnitz, DEU)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
33
号:
2
ページ:
022204-022204-6
発行年:
2015年03月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)