文献
J-GLOBAL ID:201502213006027567
整理番号:15A1310251
低圧化学蒸着Si3N4ゲート誘電体と標準的フッ素イオン注入を用いて作製したノーマリオフAlGaN/GaN MIS高電子移動度トランジスタ
Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation
著者 (15件):
ZHANG Zhili
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
ZHANG Zhili
(Univ., Chinese Acad. Sci., Beijing, CHN)
,
FU Kai
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
DENG Xuguang
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
ZHANG Xiaodong
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
FAN Yaming
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
SUN Shichuang
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
SUN Shichuang
(Huazhong Univ. Sci. and Technol., Wuhan, CHN)
,
SONG Liang
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
SONG Liang
(Univ., Chinese Acad. Sci., Beijing, CHN)
,
XING Zheng
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
HUANG Wei
(Wuxi Jingkai Technol. Co., Ltd., Wuxi, CHN)
,
YU Guohao
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
CAI Yong
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
,
ZHANG Baoshun
(Suzhou Inst. Nano-Tech and Nano-Bionics, Chinese Acad. Sci., Suzhou, CHN)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
36
号:
11
ページ:
1128-1131
発行年:
2015年11月
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)