文献
J-GLOBAL ID:201502213009443812
整理番号:15A1142407
電子構造とSi(1-x)Ge_xナノワイヤの光学的性質に及ぼす表面不動態化の影響【Powered by NICT】
Impact of Surface Passivation on the Electronic Structure and Optical Properties of the Si_(1-x)Ge_x Nanowires
著者 (4件):
Lai Xin
(Coll. of Physical Sci. and Technol., Sichuan Univ. Key Lab. of High Energy Density Physics and Technol. of Ministry ...)
,
Zhang Xi
(Coll. of Physical Sci. and Technol., Sichuan Univ. Key Lab. of High Energy Density Physics and Technol. of Ministry ...)
,
Zhang Yixi
(Coll. of Physical Sci. and Technol., Sichuan Univ. Key Lab. of High Energy Density Physics and Technol. of Ministry ...)
,
Xiang Gang
(Coll. of Physical Sci. and Technol., Sichuan Univ. Key Lab. of High Energy Density Physics and Technol. of Ministry ...)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
32
号:
2
ページ:
027301-1-027301-4
発行年:
2015年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)