文献
J-GLOBAL ID:201502216069068513
整理番号:15A1268341
異なる基板温度でパルスDCマグネトロンスパッタリングによって堆積されたホウ素ドープZnO薄膜の性質
Properties of boron-doped ZnO thin films deposited by pulsed DC magnetron sputtering at different substrate temperatures
著者 (10件):
WEN B.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
,
LIU C. Q.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
,
WANG N.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
,
WANG H. L.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
,
LIU S. M.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
,
JIANG W. W.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
,
DING W. Y.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
,
FEI W. D.
(Harbin Inst. of Technol., School of Materials Sci. and Engineering, 150001, Harbin, People’s Republic of China)
,
FEI W. D.
(Qinghai Univ., School of Mechanical Engineering, 810016, Xining, People’s Republic of China)
,
CHAI W. P.
(Dalian Jiaotong Univ., Engineering Res. Center of Optoelectronic Materials and Devices, School of Materials Sci. and ...)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
121
号:
3
ページ:
1147-1153
発行年:
2015年11月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)