文献
J-GLOBAL ID:201502217188866432
整理番号:15A1407450
分子線エピタキシーを用いて成長させたScxGa1-xN薄膜の微細構造への金属の豊富な成長条件の効果
The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy
著者 (10件):
TSUI H. C. L.
(Dep. of Materials, Imperial Coll. London, Exhibition Road, London, SW7 2AZ, GBR)
,
GOFF L. E.
,
BARRADAS N. P.
(CTN - Centro de Ciencias e Tecnologias Nucleares, Instituto Superior Tecnico, Universidade de Lisboa, E.N. 10 ao km ...)
,
ALVES E.
,
PEREIRA S.
(CICECO and Dep. of Physics, Universidade de Aveiro, 3810-193, Aveiro, PRT)
,
BEERE H. E.
(Dep. of Physics, Univ. of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, GBR)
,
FARRER I.
(Dep. of Physics, Univ. of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, GBR)
,
NICOLL C. A.
(Dep. of Physics, Univ. of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, GBR)
,
RITCHIE D. A.
(Dep. of Physics, Univ. of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, GBR)
,
MORAM M. A.
(Dep. of Materials, Imperial Coll. London, Exhibition Road, London, SW7 2AZ, GBR)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
212
号:
12
ページ:
2837-2842
発行年:
2015年12月
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)