文献
J-GLOBAL ID:201502217501291560
整理番号:15A0886586
ブラックシリコンで応答性を高めたGe-オン-Siフォトダイオード
Ge-on-Si photodiode with black silicon boosted responsivity
著者 (8件):
STEGLICH M.
(Inst. of Applied Physics, Abbe Center of Photonics, Friedrich Schiller Univ. Jena, A.-Einstein-Str. 15, 07745 Jena, DEU)
,
OEHME M.
(Inst. for Semiconductor Engineering, Univ. of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, DEU)
,
KAESEBIER T.
(Inst. of Applied Physics, Abbe Center of Photonics, Friedrich Schiller Univ. Jena, A.-Einstein-Str. 15, 07745 Jena, DEU)
,
ZILK M.
(Inst. of Applied Physics, Abbe Center of Photonics, Friedrich Schiller Univ. Jena, A.-Einstein-Str. 15, 07745 Jena, DEU)
,
KOSTECKI K.
(Inst. for Semiconductor Engineering, Univ. of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, DEU)
,
KLEY E.-b.
(Inst. of Applied Physics, Abbe Center of Photonics, Friedrich Schiller Univ. Jena, A.-Einstein-Str. 15, 07745 Jena, DEU)
,
SCHULZE J.
(Inst. for Semiconductor Engineering, Univ. of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, DEU)
,
TUENNERMANN A.
(Inst. of Applied Physics, Abbe Center of Photonics, Friedrich Schiller Univ. Jena, A.-Einstein-Str. 15, 07745 Jena, DEU)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
107
号:
5
ページ:
051103-051103-4
発行年:
2015年08月03日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)