文献
J-GLOBAL ID:201502218619962596
整理番号:15A0223153
InGaN/シリコンヘテロ接合に基づいた狭帯域近赤外検出器
InGaN/silicon heterojunction based narrow band near-infrared detector
著者 (7件):
PILLAI Rajeev
(Integrated Micro Sensors Inc., Houston, Texas 77096 and Dep. of Physics, Univ. of Houston, Houston, Texas 77204)
,
STARIKOV David
(Integrated Micro Sensors Inc., Houston, Texas 77096)
,
GANDHI Jateen
(Integrated Micro Sensors Inc., Houston, Texas 77096 and Dep. of Physics, Univ. of Houston, Houston, Texas 77204)
,
DEBNATH Ananya
(Dep. of Physics, Univ. of Houston, Houston, Texas 77204)
,
LI Ruiteng
(Dep. of Physics, Univ. of Houston, Houston, Texas 77204)
,
BONEY Christopher
(Integrated Micro Sensors, 10814 Atwell Dr, Houston, Texas 77096)
,
BENSAOULA Abdelhak
(Integrated Micro Sensors Inc., Houston, Texas 77096)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
33
号:
1
ページ:
011205-011205-6
発行年:
2015年01月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)