文献
J-GLOBAL ID:201502219549268228
整理番号:15A1089584
暗視野電子線ホログラフィーによるサブ10nm SiGe層の2D歪測定
2D strain measurement in sub-10 nm SiGe layer with dark-field electron holography
著者 (9件):
HOANG Van Vuong
(Dep. of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, KOR)
,
HOANG Van Vuong
(Dep. of Materials Sci. and Engineering, Chungnam National Univ., Daejeon 305-764, KOR)
,
CHO Young Ji
(Dep. of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, KOR)
,
YOO Jung Ho
(Dep. of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, KOR)
,
YANG Jun-Mo
(Dep. of Measurement & Analysis, National Nanofab Center, Daejeon 305-806, KOR)
,
CHOI Sungha
(FC R&D Team, Eugene Technol. Co., Ltd, Yongin, Gyeonggi 449-824, KOR)
,
JUNG Wooduck
(FC R&D Team, Eugene Technol. Co., Ltd, Yongin, Gyeonggi 449-824, KOR)
,
CHOI Yong Ho
(Dep. of High-Tech Materials Engineering, Jungwon Univ., Goesan, Chungbuk 367-805, KOR)
,
HONG Soon-Ku
(Dep. of Materials Sci. and Engineering, Chungnam National Univ., Daejeon 305-764, KOR)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
15
号:
11
ページ:
1529-1533
発行年:
2015年11月
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)