文献
J-GLOBAL ID:201502221425731692
整理番号:15A1171358
SOA限界に近い電気ストレス下での高速SiGe:C HBTの信頼性
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit
著者 (9件):
JACQUET T.
(IMS Lab., Univ. of Bordeaux, UMR CNRS 5218, Cours de la Liberation, 33405 Cedex Talence, FRA)
,
JACQUET T.
(Dep. of Electrical Engineering and Information Technol., Univ. of Naples Federico II, Naples, ITA)
,
SASSO G.
(Dep. of Electrical Engineering and Information Technol., Univ. of Naples Federico II, Naples, ITA)
,
CHAKRAVORTY A.
(Dept. of Electrical Engineering, Indian Inst. of Technol., Madras, IND)
,
RINALDI N.
(Dep. of Electrical Engineering and Information Technol., Univ. of Naples Federico II, Naples, ITA)
,
AUFINGER K.
(Infineon Technologies AG, Neubiberg, DEU)
,
ZIMMER T.
(IMS Lab., Univ. of Bordeaux, UMR CNRS 5218, Cours de la Liberation, 33405 Cedex Talence, FRA)
,
D’ALESSANDRO V.
(Dep. of Electrical Engineering and Information Technol., Univ. of Naples Federico II, Naples, ITA)
,
MANEUX C.
(IMS Lab., Univ. of Bordeaux, UMR CNRS 5218, Cours de la Liberation, 33405 Cedex Talence, FRA)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
55
号:
9-10
ページ:
1433-1437
発行年:
2015年08月
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)