文献
J-GLOBAL ID:201502235570539023
整理番号:15A0170259
アンモニアベースの分子ビームエピタクシーによって成長させたMgドープp型GaN中の深い準位状態に及ぼす陽子照射の効果
Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
著者 (9件):
ZHANG Z.
(Dep. of Electrical and Computer Engineering, The Ohio State Univ., Columbus, Ohio 43210, USA)
,
AREHART A. R.
(Dep. of Electrical and Computer Engineering, The Ohio State Univ., Columbus, Ohio 43210, USA)
,
KYLE E. C. H.
(Dep. of Materials, Univ. of California, Santa Barbara, California 93106-5050, USA)
,
CHEN J.
(Dep. of Electrical Engineering and Computer Sci., Vanderbilt Univ., Nashville, Tennessee 37235, USA)
,
ZHANG E. X.
(Dep. of Electrical Engineering and Computer Sci., Vanderbilt Univ., Nashville, Tennessee 37235, USA)
,
FLEETWOOD D. M.
(Dep. of Electrical Engineering and Computer Sci., Vanderbilt Univ., Nashville, Tennessee 37235, USA)
,
SCHRIMPF R. D.
(Dep. of Electrical Engineering and Computer Sci., Vanderbilt Univ., Nashville, Tennessee 37235, USA)
,
SPECK J. S.
(Dep. of Materials, Univ. of California, Santa Barbara, California 93106-5050, USA)
,
RINGEL S. A.
(Dep. of Electrical and Computer Engineering, The Ohio State Univ., Columbus, Ohio 43210, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
106
号:
2
ページ:
022104-022104-5
発行年:
2015年01月12日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)