文献
J-GLOBAL ID:201502251997136839
整理番号:15A0274889
窒化ケイ素薄膜中に埋め込まれたシリコン量子ドットの特性と電荷貯蔵
Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film
著者 (6件):
LIAO Wugang
(School of Optical and Electronic Information, Huazhong Univ. of Sci. and Technol., 430074, Wuhan, Hubei, CHN)
,
ZENG Xiangbin
(School of Optical and Electronic Information, Huazhong Univ. of Sci. and Technol., 430074, Wuhan, Hubei, CHN)
,
WEN Xixing
(School of Optical and Electronic Information, Huazhong Univ. of Sci. and Technol., 430074, Wuhan, Hubei, CHN)
,
ZHENG Wenjun
(School of Optical and Electronic Information, Huazhong Univ. of Sci. and Technol., 430074, Wuhan, Hubei, CHN)
,
WEN Yangyang
(School of Optical and Electronic Information, Huazhong Univ. of Sci. and Technol., 430074, Wuhan, Hubei, CHN)
,
YAO Wei
(Univ. of Sci. and Technol., Shenzhen Inst. of Huazhong, 518000, Shenzhen, CHN)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
44
号:
3
ページ:
1015-1020
発行年:
2015年03月
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)