文献
J-GLOBAL ID:201502255015018728
整理番号:15A0223155
分子線エピタキシーを用いてInSb基板上に成長させた格子整合CdZnTe合金の少数キャリア寿命
Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy
著者 (6件):
LIU Shi
(Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State Univ. ...)
,
ZHAO Xin-hao
(Center for Photonics Innovation and School for Engineering of Matter, Transport and Energy, Arizona State Univ. ...)
,
CAMPBELL Calli
(Center for Photonics Innovation and School for Engineering of Matter, Transport and Energy, Arizona State Univ. ...)
,
DINEZZA Michael J.
(Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State Univ. ...)
,
ZHAO Yuan
(Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State Univ. ...)
,
ZHANG Yong-hang
(Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State Univ. ...)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
33
号:
1
ページ:
011207-011207-4
発行年:
2015年01月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)