文献
J-GLOBAL ID:201502255765477058
整理番号:15A0498154
強誘電性SiドーピングHfO2薄膜へのTaN界面特性と電場サイクルの影響
TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
著者 (9件):
LOMENZO Patrick D.
(Dep. of Electrical and Computer Engineering, Univ. of Florida, Gainesville, Florida 32611, USA)
,
TAKMEEL Qanit
(Dep. of Materials Sci. and Engineering at the Univ. of Florida, Gainesville, Florida 32611, USA)
,
ZHOU Chuanzhen
(Analytical Instrumentation Center, Coll. of Engineering at North Carolina State Univ., Raleigh, North Carolina 27696 ...)
,
FANCHER Chris M.
(Dep. of Materials Sci. and Engineering at North Carolina State Univ., Raleigh, North Carolina 27696, USA)
,
LAMBERS Eric
(Major Analytical Instrumentation Center at the Univ. of Florida, Gainesville, Florida 32611, USA)
,
RUDAWSKI Nicholas G.
(Major Analytical Instrumentation Center at the Univ. of Florida, Gainesville, Florida 32611, USA)
,
JONES Jacob L.
(Dep. of Materials Sci. and Engineering at North Carolina State Univ., Raleigh, North Carolina 27696, USA)
,
MOGHADDAM Saeed
(Dep. of Mechanical and Aerospace Engineering at the Univ. of Florida, Gainesville, Florida 32611, USA)
,
NISHIDA Toshikazu
(Dep. of Electrical and Computer Engineering, Univ. of Florida, Gainesville, Florida 32611, USA)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
117
号:
13
ページ:
134105-134105-10
発行年:
2015年04月07日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)