文献
J-GLOBAL ID:201502256338180415
整理番号:15A0556302
TSVsとして高分子絶縁を持つ超低抵抗率シリコンピラーを用いた新しいインターポーザ技術の電気特性
Electrical characteristics of a novel interposer technique using ultra-low-resistivity silicon-pillars with polymer insulation as TSVs
著者 (7件):
WANG Weijiang
(School of Information and Electronics, Beijing Inst. of Technol., Beijing 100081, CHN)
,
YAN Yangyang
(School of Information and Electronics, Beijing Inst. of Technol., Beijing 100081, CHN)
,
DING Yingtao
(School of Information and Electronics, Beijing Inst. of Technol., Beijing 100081, CHN)
,
WANG Shiwei
(School of Information and Electronics, Beijing Inst. of Technol., Beijing 100081, CHN)
,
WANG Weimin
(School of Information and Electronics, Beijing Inst. of Technol., Beijing 100081, CHN)
,
SUN Yipeng
(School of Information and Electronics, Beijing Inst. of Technol., Beijing 100081, CHN)
,
CHEN Qianwen
(School of Information and Electronics, Beijing Inst. of Technol., Beijing 100081, CHN)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
137
ページ:
146-152
発行年:
2015年04月02日
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)