文献
J-GLOBAL ID:201502260136763190
整理番号:15A0734302
メタモルフィックInxAl1-xAsに基づく歪み緩和の緩衝技術
Strain-relaxed buffer technology based on metamorphic In Al1- As
著者 (7件):
LOKE Wan Khai
(School of Electrical and Electronic Engineering, Nanyang Technological Univ. (NTU), Nanyang Avenue, Singapore ...)
,
TAN Kian Hua
(School of Electrical and Electronic Engineering, Nanyang Technological Univ. (NTU), Nanyang Avenue, Singapore ...)
,
WICAKSONO Satrio
(School of Electrical and Electronic Engineering, Nanyang Technological Univ. (NTU), Nanyang Avenue, Singapore ...)
,
YOON Soon Fatt
(School of Electrical and Electronic Engineering, Nanyang Technological Univ. (NTU), Nanyang Avenue, Singapore ...)
,
WANG Wei
(Dep. of Electrical and Computer Engineering, National Univ. of Singapore (NUS), Singapore, Singapore 117576)
,
ZHOU Qian
(Dep. of Electrical and Computer Engineering, National Univ. of Singapore (NUS), Singapore, Singapore 117576)
,
YEO Yee-Chia
(Dep. of Electrical and Computer Engineering, National Univ. of Singapore (NUS), Singapore, Singapore 117576)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
424
ページ:
68-76
発行年:
2015年08月15日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)