文献
J-GLOBAL ID:201502261489679660
整理番号:15A0274922
GaInNAs/GaAs変調ドープ量子井戸構造における負と正の磁気抵抗
Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures
著者 (7件):
NUTKU Ferhat
(Istanbul Univ., Dep. of Physics, Fac. of Sci., Vezneciler, 34134, Istanbul, TUR)
,
DONMEZ Omer
(Istanbul Univ., Dep. of Physics, Fac. of Sci., Vezneciler, 34134, Istanbul, TUR)
,
SARCAN Fahrettin
(Istanbul Univ., Dep. of Physics, Fac. of Sci., Vezneciler, 34134, Istanbul, TUR)
,
EROL Ayse
(Istanbul Univ., Dep. of Physics, Fac. of Sci., Vezneciler, 34134, Istanbul, TUR)
,
PUUSTINEN Janne
(Tampere Univ. of Technol., Optoelectronics Res. Centre, Korkeakoulunkatu, 33720, Tampere, FIN)
,
ARIKAN Mehmet Cetin
(Istanbul Univ., Dep. of Physics, Fac. of Sci., Vezneciler, 34134, Istanbul, TUR)
,
GUINA Mircea
(Tampere Univ. of Technol., Optoelectronics Res. Centre, Korkeakoulunkatu, 33720, Tampere, FIN)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
118
号:
3
ページ:
823-829
発行年:
2015年03月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)