文献
J-GLOBAL ID:201502262857496179
整理番号:15A0249676
AlN界面層でのAl2O3/AlN/GaN金属-酸化物-半導体構造の界面/境界トラップ特性評価
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
著者 (8件):
LIU Shenghou
(Dep. of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Technol., Clear Water Bay, Kowloon ...)
,
YANG Shu
(Dep. of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Technol., Clear Water Bay, Kowloon ...)
,
TANG Zhikai
(Dep. of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Technol., Clear Water Bay, Kowloon ...)
,
JIANG Qimeng
(Dep. of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Technol., Clear Water Bay, Kowloon ...)
,
LIU Cheng
(Dep. of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Technol., Clear Water Bay, Kowloon ...)
,
WANG Maojun
(Inst. of Microelectronics, Peking Univ., Beijing 100871, CHN)
,
SHEN Bo
(School of Physics, Peking Univ., Beijing 100871, CHN)
,
CHEN Kevin J.
(Dep. of Electronic and Computer Engineering, The Hong Kong Univ. of Sci. and Technol., Clear Water Bay, Kowloon ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
106
号:
5
ページ:
051605-051605-4
発行年:
2015年02月02日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)