文献
J-GLOBAL ID:201502265629329431
整理番号:15A0620361
電子ビーム処理によるゾル-ゲル由来InドープZnO薄膜の電気的性質改善
Improvement in electrical properties of sol-gel-derived In-doped ZnO thin film by electron beam treatment
著者 (6件):
KIM Solbaro
(Yonsei Univ. 50 Yonsei-ro, Dep. of Chemical and Biomolecular Engineering, Seodaemun-gu, 120-749, Seoul, KOR)
,
KIM Changheon
(Yonsei Univ. 50 Yonsei-ro, Dep. of Chemical and Biomolecular Engineering, Seodaemun-gu, 120-749, Seoul, KOR)
,
NA Jihoon
(Yonsei Univ. 50 Yonsei-ro, Dep. of Chemical and Biomolecular Engineering, Seodaemun-gu, 120-749, Seoul, KOR)
,
OH Eunseok
(Yonsei Univ. 50 Yonsei-ro, Dep. of Chemical and Biomolecular Engineering, Seodaemun-gu, 120-749, Seoul, KOR)
,
JEONG Chaehwan
(Korea Inst. of Industrial Technol., Applied Optics and Energy Res. Group, 1110-9 Oryong-dong, Buk-gu, 500-480 ...)
,
LIM Sangwoo
(Yonsei Univ. 50 Yonsei-ro, Dep. of Chemical and Biomolecular Engineering, Seodaemun-gu, 120-749, Seoul, KOR)
資料名:
Journal of Sol-Gel Science and Technology
(Journal of Sol-Gel Science and Technology)
巻:
74
号:
3
ページ:
790-799
発行年:
2015年06月
JST資料番号:
W0812A
ISSN:
0928-0707
CODEN:
JSGTEC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)