文献
J-GLOBAL ID:201502269715649681
整理番号:15A0440614
空格子点ドリフト抵抗スイッチの低電圧2状態変数メムリスタモデル
Low voltage two-state-variable memristor model of vacancy-drift resistive switches
著者 (7件):
ZHANG Lu
(Univ. of Pittsburgh, Dep. of Electrical and Computer Engineering, 15261, Pittsburgh, PA, USA)
,
GE Ning
(Hewlett-Packard Laboratories, 1501 Page Mill Road, 94304, Palo Alto, CA, USA)
,
JOSHUA YANG J.
(Hewlett-Packard Laboratories, 1501 Page Mill Road, 94304, Palo Alto, CA, USA)
,
JOSHUA YANG J.
(Univ. of Massachusetts, Dep. of Electrical and Computer Engineering, 01003-9292, Amherst, MA, USA)
,
LI Zhiyong
(Hewlett-Packard Laboratories, 1501 Page Mill Road, 94304, Palo Alto, CA, USA)
,
STANLEY WILLIAMS R.
(Hewlett-Packard Laboratories, 1501 Page Mill Road, 94304, Palo Alto, CA, USA)
,
CHEN Yiran
(Univ. of Pittsburgh, Dep. of Electrical and Computer Engineering, 15261, Pittsburgh, PA, USA)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
119
号:
1
ページ:
1-9
発行年:
2015年04月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)