文献
J-GLOBAL ID:201502270810649123
整理番号:15A0706477
高周波マグネトロンスパッタリングにより作製したCuIn1-xAlxSe2薄膜の構造及び電気特性
Structural and electrical properties of CuIn1- Al Se2 thin films prepared by radio-frequency magnetron sputtering process
著者 (8件):
ZHANG Jun
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
DENG Hongmei
(Lab. for Microstructures, Shanghai Univ., 99 Shangda Rd, Shanghai 200444, CHN)
,
HE Jun
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
MENG Xiankuan
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
LIU Tantan
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
SUN Lin
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
YANG Pingxiong
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
,
CHU Junhao
(Key Lab. of Polar Materials and Devices, Ministry of Education, Dep. of Electronic Engineering, East China Normal ...)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
326
ページ:
211-215
発行年:
2015年01月30日
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)