文献
J-GLOBAL ID:201502271109620435
整理番号:15A0375420
過酸化水素表面処理によるGaNベースのSchottkyダイオードの水素感度性能の向上
Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment
著者 (7件):
CHEN Chun-Chia
(Inst. of Microelectronics, Dep. of Electrical Engineering, National Cheng-Kung Univ., 1 Univ. Road, Tainan 70101 ...)
,
CHEN Huey-Ing
(Dep. of Chemical Engineering, National Cheng-Kung Univ., 1 Univ. Road, Tainan 70101, Taiwan, TWN)
,
LIU I-Ping
(Dep. of Chemical Engineering, National Cheng-Kung Univ., 1 Univ. Road, Tainan 70101, Taiwan, TWN)
,
LIU Hao-Yeh
(Inst. of Microelectronics, Dep. of Electrical Engineering, National Cheng-Kung Univ., 1 Univ. Road, Tainan 70101 ...)
,
CHOU Po-Cheng
(Inst. of Microelectronics, Dep. of Electrical Engineering, National Cheng-Kung Univ., 1 Univ. Road, Tainan 70101 ...)
,
LIOU Jian-Kai
(Inst. of Microelectronics, Dep. of Electrical Engineering, National Cheng-Kung Univ., 1 Univ. Road, Tainan 70101 ...)
,
LIU Wen-Chau
(Inst. of Microelectronics, Dep. of Electrical Engineering, National Cheng-Kung Univ., 1 Univ. Road, Tainan 70101 ...)
資料名:
Sensors and Actuators. B. Chemical
(Sensors and Actuators. B. Chemical)
巻:
211
ページ:
303-309
発行年:
2015年05月
JST資料番号:
T0967A
ISSN:
0925-4005
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)