文献
J-GLOBAL ID:201502272116841605
整理番号:15A0556068
構成成分からの典型的なII-VIワイドギャップ半導体結晶の直接的蒸気成長
Vapor growth of typical II-VI wide-gap semiconductor crystals directly from the constituent elements
著者 (5件):
LI Huanyong
(State Key Lab of Solidification Processing, School of Material Sci. and Engineering, Northwestern Polytechnical ...)
,
GU Zhi
(State Key Lab of Solidification Processing, School of Material Sci. and Engineering, Northwestern Polytechnical ...)
,
ZHANG Haiyang
(State Key Lab of Solidification Processing, School of Material Sci. and Engineering, Northwestern Polytechnical ...)
,
LI Heqing
(State Key Lab of Solidification Processing, School of Material Sci. and Engineering, Northwestern Polytechnical ...)
,
FU Li
(State Key Lab of Solidification Processing, School of Material Sci. and Engineering, Northwestern Polytechnical ...)
資料名:
Materials Research Bulletin
(Materials Research Bulletin)
巻:
69
ページ:
126-130
発行年:
2015年09月
JST資料番号:
B0954A
ISSN:
0025-5408
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)