文献
J-GLOBAL ID:201502272357547058
整理番号:15A0467629
GaSb基板上の希釈窒化物InGaSbN/InAs超格子のバンドギャップへの歪釣合い効果の理論研究
Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates
著者 (10件):
HAZBUN Ramsey
(Univ. of Delaware, Dep. of Electrical and Computer Engineering, 140 Evans Hall, Newark, DE 19717, USA)
,
BHARGAVA Nupur
(Univ. of Delaware, Dep. of Electrical and Computer Engineering, 140 Evans Hall, Newark, DE 19717, USA)
,
RODRIGUEZ-TORO Victor A.
(Univ. of Delaware, Dep. of Electrical and Computer Engineering, 140 Evans Hall, Newark, DE 19717, USA)
,
RODRIGUEZ-TORO Victor A.
(Universidad del Valle, Escuela de Ingenieria Electrica y Electronica, A.A. 25360 Cali, Colombia)
,
GOOSSEN Keith
(Univ. of Delaware, Dep. of Electrical and Computer Engineering, 140 Evans Hall, Newark, DE 19717, USA)
,
KOLODZEY James
(Univ. of Delaware, Dep. of Electrical and Computer Engineering, 140 Evans Hall, Newark, DE 19717, USA)
,
RAM-MOHAN L. Ramdas
(Dep. of Physics, Worcester Polytechnic Inst., 100 Inst. Road, Worcester, MA 01609, USA)
,
AINA Leye
(Epitaxial Technologies, 1450 South Rolling Rd, Baltimore, MD 21227, USA)
,
FATHIMULLA Ayub
(Epitaxial Technologies, 1450 South Rolling Rd, Baltimore, MD 21227, USA)
,
HIER Harry
(Epitaxial Technologies, 1450 South Rolling Rd, Baltimore, MD 21227, USA)
資料名:
Infrared Physics & Technology
(Infrared Physics & Technology)
巻:
69
ページ:
211-217
発行年:
2015年03月
JST資料番号:
H0184A
ISSN:
1350-4495
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)