文献
J-GLOBAL ID:201502272737345474
整理番号:15A0581171
u-InGaN/AlInGaN超格子最終量子障壁を持つInGaN発光ダイオードの効率増強
Efficiency enhancement of an InGaN light-emitting diode with a u-InGaN/AlInGaN superlattice last quantum barrier
著者 (6件):
ZENG Si-Ming
(South China Normal Univ., Lab. of Nanophotonic Functional Materials and Devices, Inst. of Optoelectronic Materials ...)
,
ZENG Si-Ming
(Guangdong Univ. of Technol., Experimental Teaching Center, 510006, Guangzhou, CHN)
,
FAN Guang-Han
(South China Normal Univ., Lab. of Nanophotonic Functional Materials and Devices, Inst. of Optoelectronic Materials ...)
,
ZHENG Shu-Wen
(South China Normal Univ., Lab. of Nanophotonic Functional Materials and Devices, Inst. of Optoelectronic Materials ...)
,
XIONG Jian-Yong
(South China Normal Univ., Lab. of Nanophotonic Functional Materials and Devices, Inst. of Optoelectronic Materials ...)
,
ZHANG Tao
(South China Normal Univ., Lab. of Nanophotonic Functional Materials and Devices, Inst. of Optoelectronic Materials ...)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
119
号:
3
ページ:
971-975
発行年:
2015年06月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)