文献
J-GLOBAL ID:201502281734493560
整理番号:15A0621322
急速溶融成長によるゲルマニウムオンインシュレータ構造におけるSi-Ge相互拡散の阻害
Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth
著者 (8件):
WEN J.J.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
,
LIU Z.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
,
ZHOU T.W.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
,
XUE C.L.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
,
ZUO Y.H.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
,
LI C.B.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
,
WANG Q.M.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
,
CHENG B.W.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, Beijing 100083, CHN)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
586
ページ:
54-57
発行年:
2015年07月01日
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)