文献
J-GLOBAL ID:201602204347858855
整理番号:13A1480184
Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering
著者 (5件):
He Yangyang
(School of Physics and Materials Engineering,Dalian Nationalities Univ., Dalian)
,
Su Yuanjun
(Dalian Univ. of Technol. Key Lab. of Materials Modification by Laser,Ion and Electron Beams,Ministry of Education ...)
,
Zhu Ming
(Dalian Univ. of Technol. Key Lab. of Materials Modification by Laser,Ion and Electron Beams,Ministry of Education ...)
,
Cao Baosheng
(School of Physics and Materials Engineering,Dalian Nationalities Univ., Dalian)
,
Dong Bin
(School of Physics and Materials Engineering,Dalian Nationalities Univ., Dalian)
資料名:
Science China. Physics, Mechanics & Astronomy
(Science China. Physics, Mechanics & Astronomy)
巻:
55
号:
11
ページ:
2070-2075
発行年:
2012年
JST資料番号:
C2587A
ISSN:
1674-7348
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)