文献
J-GLOBAL ID:201602205932401680
整理番号:16A0168692
Geant4コードを用いた陽電子後方散乱とイオン注入後の分布プロフィールのシミュレーション【Powered by NICT】
Simulation of positron backscattering and implantation profiles using Geant4 code
著者 (5件):
Huang Shijuan
(Dep. of Modern Physics, Univ. of Sci. and Technol. of China State Key Lab. of Particle Detection and Electronics, Hefei)
,
Pan Ziwen
(Dep. of Modern Physics, Univ. of Sci. and Technol. of China State Key Lab. of Particle Detection and Electronics, Hefei)
,
Liu Jiandang
(Dep. of Modern Physics, Univ. of Sci. and Technol. of China State Key Lab. of Particle Detection and Electronics, Hefei)
,
Han Rongdian
(Dep. of Modern Physics, Univ. of Sci. and Technol. of China State Key Lab. of Particle Detection and Electronics, Hefei)
,
Ye Bangjiao
(Dep. of Modern Physics, Univ. of Sci. and Technol. of China State Key Lab. of Particle Detection and Electronics, Hefei)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
24
号:
10
ページ:
107803-1-107803-8
発行年:
2015年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)