文献
J-GLOBAL ID:201602207731287210
整理番号:15A1302081
LXXXIII nm低雑音InPに基づくInAlAs/InGaAs PHEMTの設計と実装【Powered by NICT】
Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs
著者 (10件):
Wang Zhiming
(Beijing Inst. of Technol. Beijing Key Lab. of Millimeter Wave and Terahertz Technol., Beijing)
,
Zhao Zhuobin
(Beijing Inst. of Technol. Beijing Key Lab. of Millimeter Wave and Terahertz Technol., Beijing)
,
Hu Zhifu
(Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Huang Hui
(National Inst. of Metrology, Beijing)
,
Cui Yuxing
(Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Sun Xiguo
(Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Mo Jianghui
(Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Li Liang
(Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Fu Xingchang
(Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Lu Xin
(Beijing Inst. of Technol. Beijing Key Lab. of Millimeter Wave and Terahertz Technol., Beijing)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
36
号:
8
ページ:
084002-01-084002-05
発行年:
2015年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)