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J-GLOBAL ID:201602209380412148
整理番号:16A0169008
UTBOX SOI nMOSFETにおけるシリコン膜に関係したランダム電信雑音【Powered by NICT】
Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
著者 (7件):
Fang Wen
(IMEC, Kapeldreef 75 Key Lab. of Microelectronic Devices & Integrated Technol., Chinese Acad. of Sciences, Belgium ...)
,
Eddy Simoen
(IMEC, Kapeldreef 75, Belgium, Leuven)
,
Li Chikang
(Graduate Inst. of Photonics and Optoelectronics and Dep. of Electrical, Engineering, National Taiwan Univ., Taiwan)
,
Marc Aoulaiche
(Micron Technol. Belgium, IMEC Campus, Belgium, Leuven)
,
Luo Jun
(Inst. of Microelectronics, Chinese Acad. of Sciences Key Lab. of Microelectronic Devices & Integrated ...)
,
Zhao Chao
(Inst. of Microelectronics, Chinese Acad. of Sciences Key Lab. of Microelectronic Devices & Integrated ...)
,
Cor Claeys
(IMEC, Kapeldreef 75 Key Lab. of Microelectronic Devices & Integrated Technol., Chinese Acad. of Sciences, Belgium ...)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
36
号:
9
ページ:
94005-1-94005-5
発行年:
2015年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)