文献
J-GLOBAL ID:201602211537565800
整理番号:13A1264546
Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates
著者 (7件):
Li Jia
(Sci. and Technol. on ASIC Lab., Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Wang Li
(Information Center of Sci. and Technol., Beijing)
,
Feng Zhihong
(Sci. and Technol. on ASIC Lab., Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Yu Cui
(Sci. and Technol. on ASIC Lab., Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Liu Qingbin
(Sci. and Technol. on ASIC Lab., Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Dun Shaobo
(Sci. and Technol. on ASIC Lab., Hebei Semiconductor Res. Inst., Shijiazhuang)
,
Cai Shujun
(Sci. and Technol. on ASIC Lab., Hebei Semiconductor Res. Inst., Shijiazhuang)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
21
号:
9
ページ:
097304-1-097304-4
発行年:
2012年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)