文献
J-GLOBAL ID:201602214934135501
整理番号:16A0168667
全線量照射により誘起された市販のディープサブミクロンSRAMの機能的故障モードの解析【Powered by NICT】
Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
著者 (8件):
Zheng Qiwen
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
,
Cui Jiangwei
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
,
Zhou Hang
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
,
Yu Dezhao
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
,
Yu Xuefeng
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
,
Lu Wu
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
,
Guo Qi
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
,
Ren Diyuan
(Xinjiang Technical Inst. of Physics and Chemistry, Chinese Acad. of Sciences Key Lab. of Functional Materials and ...)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
24
号:
10
ページ:
106106-1-106106-6
発行年:
2015年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)