文献
J-GLOBAL ID:201602215975413890
整理番号:15A1292904
静水圧によるウルツ鉱型GaAsナノワイヤにおけるバンドギャップ工学【Powered by NICT】
Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure
著者 (8件):
Yang Shuang
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
,
Ding Kun
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
,
Dou Xiuming
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
,
Yu Ying
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
,
Ni Haiqiao
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
,
Niu Zhichuan
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
,
Jiang Desheng
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
,
Sun Baoquan
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. for Superlattices and Microstructures, Beijing)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
32
号:
7
ページ:
077803-1-077803-3
発行年:
2015年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)