文献
J-GLOBAL ID:201602216252109803
整理番号:16A0096314
グラフェン-酸化物-抵抗スイッチングメモリ中の導電性ナノフィラメントの直接観察
Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory
著者 (5件):
KIM Sung Kyu
(Dep. of Materials Sci. and Engineering, KAIST, Daejeon, 34141, KOR)
,
KIM Jong Yoon
(Graphene Res. Center and School of Electrical Engineering, KAIST, Daejeon, 34141, KOR)
,
CHOI Sung-Yool
(Graphene Res. Center and School of Electrical Engineering, KAIST, Daejeon, 34141, KOR)
,
LEE Jeong Yong
,
JEONG Hu Young
(UNIST Central Res. Facilities (UCRF) and School of Materials Sci. and Engineering, UNIST, Ulsan, 44919, KOR)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
25
号:
43
ページ:
6710-6715
発行年:
2015年11月
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)