文献
J-GLOBAL ID:201602216971346930
整理番号:16A0168777
AlGaN/AlN/GaN構造のGaN核合体過程の延長を介した成長条件最適化と移動度の増大【Powered by NICT】
Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
著者 (11件):
He Xiaoguang
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Zhao Degang
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Jiang Desheng
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Zhu Jianjun
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Chen Ping
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Liu Zongshun
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Le Lingcong
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Yang Jing
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Li Xiaojing
(Inst. of Semiconductors, Chinese Acad. of Sciences State Key Lab. on Integrated Optoelectronics, Beijing)
,
Zhang Shuming
(Suzhou Inst. of Nano-tech and Nano-bionics, Chinese Acad. of Sciences, Suzhou)
,
Yang Hui
(Suzhou Inst. of Nano-tech and Nano-bionics, Chinese Acad. of Sciences, Suzhou)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
24
号:
9
ページ:
096802-1-096802-4
発行年:
2015年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)