文献
J-GLOBAL ID:201602217691050560
整理番号:13A1254151
A novel high performance ESD power clamp circuit with a small area
著者 (4件):
Yang Zhaonian
(School of Microelectronics, Xidian Univ. Key Lab. of the Ministry of Education for Wide Band-Gap Semiconductor ...)
,
Liu Hongxia
(School of Microelectronics, Xidian Univ. Key Lab. of the Ministry of Education for Wide Band-Gap Semiconductor ...)
,
Li Li
(School of Microelectronics, Xidian Univ. Key Lab. of the Ministry of Education for Wide Band-Gap Semiconductor ...)
,
Zhuo Qingqing
(School of Microelectronics, Xidian Univ. Key Lab. of the Ministry of Education for Wide Band-Gap Semiconductor ...)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
33
号:
9
ページ:
095006-1-095006-7
発行年:
2012年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
発行国:
中国 (CHN)
言語:
英語 (EN)