文献
J-GLOBAL ID:201602217872032653
整理番号:15A1302048
(NH_4)_2S不動態化したGaSb表面の化学的および電気的性質【Powered by NICT】
Chemical and electrical properties of (NH_4)_2S passivated GaSb surface
著者 (10件):
Tao Dongyan
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Cheng Yu
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Liu Jingming
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Su Jie
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Liu Tong
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Yang Fengyun
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Wang Fenghua
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Cao Kewei
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Dong Zhiyuan
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
,
Zhao Youwen
(Inst. of Semiconductors, Chinese Acad. of Sciences Key Lab. of Semiconductor Materials Sci., Chinese Acad. of ...)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
36
号:
7
ページ:
073006-01-073006-05
発行年:
2015年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)