文献
J-GLOBAL ID:201602217874078197
整理番号:16A0169003
温度勾配溶液成長(トゴッグ)法によるTe溶液から成長させたバルクZnTe結晶の結晶品質に及ぼすCr/Inドーピングの効果【Powered by NICT】
Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method
著者 (4件):
Yang Rui
(School of Materials Sci. and Engineering, Northwestern Polytechnical Univ. State Key Lab. of Solidification ...)
,
Jie Wanqi
(School of Materials Sci. and Engineering, Northwestern Polytechnical Univ. State Key Lab. of Solidification ...)
,
Sun Xiaoyan
(School of Materials Sci. and Engineering, Northwestern Polytechnical Univ. State Key Lab. of Solidification ...)
,
Yang Min
(School of Materials Sci. and Engineering, Northwestern Polytechnical Univ. State Key Lab. of Solidification ...)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
36
号:
9
ページ:
93006-1-93006-6
発行年:
2015年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)