文献
J-GLOBAL ID:201602218049326648
整理番号:16A0031712
rサファイア基板上の非極性a面GaNにおける形態学的および微細構造進化と関連不純物の取り込み【Powered by NICT】
Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates
著者 (8件):
Jiang Renyuan
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
,
Xu Shengrui
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
,
Zhang Jincheng
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
,
Jiang Teng
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
,
Jiang Haiqing
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
,
Wang Zhizhe
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
,
Fan Yongxiang
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
,
Hao Yue
(School of Microelectronics, Xidian Univ. State Key Lab of Wide Band-Gap Semiconductor Technol., Xi’an)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
32
号:
9
ページ:
098102-1-098102-4
発行年:
2015年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)