文献
J-GLOBAL ID:201602219655390552
整理番号:16A0380199
二重磁気トンネル接合をもつSTT-MRAM
STT-MRAM with double magnetic tunnel junctions
著者 (20件):
HU G.
(IBM TJ Watson Res. Center, New York)
,
LEE J. H.
(IBM TJ Watson Res. Center, New York)
,
NOWAK J. J.
(IBM TJ Watson Res. Center, New York)
,
SUN J. Z.
(IBM TJ Watson Res. Center, New York)
,
HARMS J.
(IBM TJ Watson Res. Center, New York)
,
ANNUNZIATA A.
(IBM TJ Watson Res. Center, New York)
,
BROWN S.
(IBM TJ Watson Res. Center, New York)
,
CHEN W.
(IBM TJ Watson Res. Center, New York)
,
KIM Y. H.
(IBM TJ Watson Res. Center, New York)
,
LAUER G.
(IBM TJ Watson Res. Center, New York)
,
LIU L.
(IBM TJ Watson Res. Center, New York)
,
MARCHACK N.
(IBM TJ Watson Res. Center, New York)
,
MURTHY S.
(IBM TJ Watson Res. Center, New York)
,
O’SULLIVAN E. J.
(IBM TJ Watson Res. Center, New York)
,
PARK J. H.
(IBM TJ Watson Res. Center, New York)
,
REUTER M.
(IBM TJ Watson Res. Center, New York)
,
ROBERTAZZI R. P.
(IBM TJ Watson Res. Center, New York)
,
TROUILLOUD P. L.
(IBM TJ Watson Res. Center, New York)
,
ZHU Y.
(IBM TJ Watson Res. Center, New York)
,
WORLEDGE D. C.
(IBM TJ Watson Res. Center, New York)
資料名:
Technical Digest. International Electron Devices Meeting
(Technical Digest. International Electron Devices Meeting)
巻:
2015
ページ:
668-671
発行年:
2015年
JST資料番号:
C0829B
ISSN:
0163-1918
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)