文献
J-GLOBAL ID:201602220500544713
整理番号:16A0007951
AlGaN多重量子井戸からの260nmにおける表面誘導放出の開始
Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells
著者 (6件):
LI Xiaohang
(Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Inst. of Technol. ...)
,
XIE Hongen
(Dep. of Physics, Arizona State Univ., Tempe, Arizona 85287, USA)
,
PONCE Fernando A.
(Dep. of Physics, Arizona State Univ., Tempe, Arizona 85287, USA)
,
RYOU Jae-hyun
(Dep. of Mechanical Engineering, Materials Sci. and Engineering Program, and Texas Center for Superconductivity at ...)
,
DETCHPROHM Theeradetch
(Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Inst. of Technol. ...)
,
DUPUIS Russell D.
(Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Inst. of Technol. ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
107
号:
24
ページ:
241109-241109-4
発行年:
2015年12月14日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)